Gigabyte

Gigabyte GP-AG4500G AORUS 500GB Gen4 NVMe SSD

4.7 (800 reviews)

PCIe 4.0 x4 bandwidth unlocks 5,000 MB/s sequential reads and 550K random write IOPS from a 500GB M.2 drive with a dedicated 512MB DDR4 cache buffer.

$99.99*
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*Price sourced from Amazon.com. Last updated:Jul 14, 2026.Price and availability are subject to change.

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Overview

The Gigabyte AORUS Gen4 GP-AG4500G is a 500GB M.2 NVMe SSD operating on the PCIe 4.0 x4 bus, delivering up to 5,000 MB/s sequential read and 2,500 MB/s sequential write throughput — figures that require a PCIe 4.0 host to achieve but represent a genuine doubling of the PCIe 3.0 ceiling. The Phison E16 controller pairs with 512MB of external DDR4 DRAM cache and 3D TLC NAND flash: the DRAM cache is specifically what separates this drive from budget NVMe options. It stores the full logical-to-physical mapping table in fast DDR4 memory, enabling the 400K read / 550K write random IOPS figures to be maintained consistently across the drive's capacity rather than degrading under sustained mixed workloads.

This drive is appropriate as a primary system and application drive for gaming builds, content creation workstations, and professional desktops on PCIe 4.0 platforms (AMD Ryzen 5000/7000 series, Intel 12th gen and later). The 5,000 MB/s sequential ceiling fully benefits large asset transfers, game installs from large packages, and video timeline scratch performance — workloads where the bus bandwidth translates directly to wall-clock time saved. The 500GB capacity is the principal constraint: as a sole storage device it becomes space-constrained under a full game library or active media project archive, making it best paired with secondary mass storage. The Phison E16's thermal output under sustained sequential writes makes an M.2 heatsink a practical necessity rather than an optional accessory for users planning prolonged transfer sessions.

Key Features

AORUS Next Generation PCIe 4.0 NVMe SSD

Capacity : 500 GB

External DDR Cache Buffer: DDR4 512MB

Interface : NVMe 1.3, PCI-Express 4.0 x4

Seq. Read speed : up to 5000 MB/s (Random Read IOPS 400K)

Seq. Write speed : up to 2500 MB/s (Random Write IOPS 550K)

Controller :Phison E16

NAND Flash :3D-TLC NAND Flash

Wear Leveling, Over-Provision Technologies

TRIM & S.M.A.R.T supported

Specifications

Capacity
500GB
Interface
NVMe 1.3, PCIe 4.0 x4
Controller
Phison E16
NAND Flash
3D TLC
DRAM Cache
DDR4 512MB
Sequential Read
Up to 5,000 MB/s
Sequential Write
Up to 2,500 MB/s
Random Read IOPS
400K
Random Write IOPS
550K
Features
Wear Leveling, Over-Provisioning, TRIM, S.M.A.R.T.

Pros & Cons

👍 Pros

  • 5,000 MB/s sequential read speed via PCIe 4.0 x4 represents a doubling of maximum throughput versus PCIe 3.0 NVMe drives, directly benefiting large file transfer and game load workloads
  • 512MB dedicated DDR4 cache buffer maintains consistent random IOPS performance under mixed workloads without the throughput cliffs seen in DRAM-less designs
  • 550K random write IOPS enables sub-millisecond response to parallel write requests — a measurable advantage in database, VM, and content-creation workloads
  • 3D TLC NAND with wear leveling and over-provisioning technology extends practical write endurance beyond the raw per-cell TLC specification
  • TRIM and S.M.A.R.T. support enable automated maintenance and health monitoring through standard OS tools and third-party utilities

👎 Cons

  • Full 5,000 MB/s rated performance requires a PCIe 4.0 x4 M.2 slot — users on PCIe 3.0 platforms see approximately 3,500 MB/s ceiling, limiting the performance premium over cheaper Gen3 drives
  • 500GB capacity is tighter than ideal as a sole system drive in 2024 — OS, applications, and a modest game library can consume most of the usable space, requiring careful storage management or a secondary drive
  • Phison E16 controller generates meaningful heat under sustained sequential workloads — adequate motherboard M.2 heatsink coverage is recommended to prevent thermal throttling in extended transfer sessions
  • 3D TLC NAND has lower write endurance per cell versus MLC alternatives — buyers with high daily write workloads should verify the drive's TBW (terabytes written) rating against their usage profile
  • No included heatsink — the drive relies on motherboard-provided thermal solutions or aftermarket M.2 heatsinks for thermal management under sustained load

Frequently Asked Questions

The AORUS Gen4 will function in a PCIe 3.0 slot but will be bandwidth-limited to approximately 3,500 MB/s sequential read — roughly half of its rated 5,000 MB/s spec. The drive is backward-compatible, but full performance requires a PCIe 4.0 x4 M.2 slot, which became standard on AMD X570/B550 platforms and Intel Alder Lake (12th gen) and later boards.
The external DRAM cache stores the drive's logical-to-physical address mapping table in fast DDR4 memory. Without it, the controller must access the NAND itself to resolve addresses — a significant latency penalty under mixed random workloads. The 512MB buffer on this 500GB drive (1MB per 1GB — the standard ratio) maintains consistent random IOPS performance throughout the drive's capacity without degradation under sustained load.
Sequential read at 5,000 MB/s applies to large contiguous file transfers — game installs, video exports, large archival copies. For OS boot and application launch, random IOPS (400K read / 550K write) are the operative figure. At 400K/550K IOPS, the drive is faster than most workloads can consume — the bottleneck will be the CPU or application, not the storage.
3D TLC (three bits per cell) NAND has lower per-cell write endurance than MLC, but at 500GB capacity the endurance rating is adequate for years of typical desktop use. The drive includes wear leveling and over-provisioning technologies that extend usable lifespan beyond the raw NAND endurance rating. Heavy sustained sequential write workloads (video production, daily backup targets) should evaluate TBW ratings specifically.
Yes. The AORUS Gen4 supports the TRIM command natively under Windows 10/11 and major Linux distributions that implement the NVMe TRIM/Unmap command. TRIM is typically enabled by default and maintains write performance consistency over time by allowing the controller to pre-erase unused blocks.