Gigabyte

Gigabyte GP-AG4500G AORUS 500GB Gen4 NVMe SSD

PCIe 4.0 x4 bandwidth unlocks 5,000 MB/s sequential reads and 550K random write IOPS from a 500GB M.2 drive with a dedicated 512MB DDR4 cache buffer.

$99.99*
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Overview

The Gigabyte AORUS Gen4 GP-AG4500G is a 500GB M.2 NVMe SSD operating on the PCIe 4.0 x4 bus, delivering up to 5,000 MB/s sequential read and 2,500 MB/s sequential write throughput — figures that require a PCIe 4.0 host to achieve but represent a genuine doubling of the PCIe 3.0 ceiling. The Phison E16 controller pairs with 512MB of external DDR4 DRAM cache and 3D TLC NAND flash: the DRAM cache is specifically what separates this drive from budget NVMe options. It stores the full logical-to-physical mapping table in fast DDR4 memory, enabling the 400K read / 550K write random IOPS figures to be maintained consistently across the drive's capacity rather than degrading under sustained mixed workloads.

This drive is appropriate as a primary system and application drive for gaming builds, content creation workstations, and professional desktops on PCIe 4.0 platforms (AMD Ryzen 5000/7000 series, Intel 12th gen and later). The 5,000 MB/s sequential ceiling fully benefits large asset transfers, game installs from large packages, and video timeline scratch performance — workloads where the bus bandwidth translates directly to wall-clock time saved. The 500GB capacity is the principal constraint: as a sole storage device it becomes space-constrained under a full game library or active media project archive, making it best paired with secondary mass storage. The Phison E16's thermal output under sustained sequential writes makes an M.2 heatsink a practical necessity rather than an optional accessory for users planning prolonged transfer sessions.

Key Features

AORUS Next Generation PCIe 4.0 NVMe SSD

Capacity : 500 GB

External DDR Cache Buffer: DDR4 512MB

Interface : NVMe 1.3, PCI-Express 4.0 x4

Seq. Read speed : up to 5000 MB/s (Random Read IOPS 400K)

Seq. Write speed : up to 2500 MB/s (Random Write IOPS 550K)

Controller :Phison E16

NAND Flash :3D-TLC NAND Flash

Wear Leveling, Over-Provision Technologies

TRIM & S.M.A.R.T supported

Specifications

Capacity
500GB
Interface
NVMe 1.3, PCIe 4.0 x4
Controller
Phison E16
NAND Flash
3D TLC
DRAM Cache
DDR4 512MB
Sequential Read
Up to 5,000 MB/s
Sequential Write
Up to 2,500 MB/s
Random Read IOPS
400K
Random Write IOPS
550K
Features
Wear Leveling, Over-Provisioning, TRIM, S.M.A.R.T.

Frequently Asked Questions

The AORUS Gen4 will function in a PCIe 3.0 slot but will be bandwidth-limited to approximately 3,500 MB/s sequential read — roughly half of its rated 5,000 MB/s spec. The drive is backward-compatible, but full performance requires a PCIe 4.0 x4 M.2 slot, which became standard on AMD X570/B550 platforms and Intel Alder Lake (12th gen) and later boards.
The external DRAM cache stores the drive's logical-to-physical address mapping table in fast DDR4 memory. Without it, the controller must access the NAND itself to resolve addresses — a significant latency penalty under mixed random workloads. The 512MB buffer on this 500GB drive (1MB per 1GB — the standard ratio) maintains consistent random IOPS performance throughout the drive's capacity without degradation under sustained load.
Sequential read at 5,000 MB/s applies to large contiguous file transfers — game installs, video exports, large archival copies. For OS boot and application launch, random IOPS (400K read / 550K write) are the operative figure. At 400K/550K IOPS, the drive is faster than most workloads can consume — the bottleneck will be the CPU or application, not the storage.
3D TLC (three bits per cell) NAND has lower per-cell write endurance than MLC, but at 500GB capacity the endurance rating is adequate for years of typical desktop use. The drive includes wear leveling and over-provisioning technologies that extend usable lifespan beyond the raw NAND endurance rating. Heavy sustained sequential write workloads (video production, daily backup targets) should evaluate TBW ratings specifically.
Yes. The AORUS Gen4 supports the TRIM command natively under Windows 10/11 and major Linux distributions that implement the NVMe TRIM/Unmap command. TRIM is typically enabled by default and maintains write performance consistency over time by allowing the controller to pre-erase unused blocks.