G.Skill

G.Skill F4-2666C19D-16GRS RipJaws 16GB (2x8GB) DDR4 SO-DIMM

Upgrade Your System with High-Performance SO-DIMM MemoryThe G.Skill RipJaws DDR4 SO-DIMM Series Memory is designed to enhance the performance of your laptop or small form factor PC. Featuring high-speed DDR4 technology and low latency, this memory kit delivers responsive multitasking and smooth p...

$59.39*
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Overview

Upgrade Your System with High-Performance SO-DIMM Memory

The G.Skill RipJaws DDR4 SO-DIMM Series Memory is designed to enhance the performance of your laptop or small form factor PC. Featuring high-speed DDR4 technology and low latency, this memory kit delivers responsive multitasking and smooth performance. Its compact design and reliable construction make it a perfect upgrade for demanding applications.

  • Capacity: 16GB (2 x 8GB)
  • Type: DDR4 SO-DIMM
  • Speed: 2666MHz
  • Latency: CL19-19-19-43
  • Voltage: 1.20V
  • Channels: Dual Channel
  • Pins: 260-Pin

Key Features

Capacity: 16 GB

Timings: CL19 19-19-43

Modules: 2 pieces

Standard: DDR4-2666 (PC4-21300)

Voltage: 1.2 V

Specifications

Brand
G.Skill
Model
F4-2666C19D-16GRS
Series
RipJaws
Capacity
16 GB
Module Count
2 pieces
Module Capacity
8 GB (each)
Memory Type
DDR4 SO-DIMM
Speed
DDR4-2666 (PC4-21300)
CAS Latency
CL19
Timings
19-19-43
Voltage
1.2 V

Frequently Asked Questions

This G.Skill RipJaws kit is DDR4 SO-DIMM memory, designed for laptops and small form factor systems; however, always check your laptop's specific memory compatibility.
CL19 refers to the CAS Latency, indicating 19 clock cycles delay before data can be accessed, which is a standard timing for DDR4-2666 modules.
Yes, you can use one 8GB module, but using both modules in a dual-channel configuration typically offers better performance.
While adding more RAM can help with overall system responsiveness and multitasking, the DDR4-2666 speed with CL19 timings is a moderate upgrade, and high-end gaming might benefit more from faster RAM.
The 1.2V operating voltage contributes to lower power consumption and less heat generation compared to higher voltage memory modules.